2011-07-11 rev. 2.6 page 1 sn7002n sipmos small-signal-transistor product summary v ds 60 v r ds(on) 5 w i d 0.2 a feature n-channel enhancement mode logic level d v /d t rated pg-sot-23 gate pin1 drain pin 3 source pin 2 marking ssn type package pb-free tape and reel information sn7002n pg-sot-23 yes h6327: 3000 pcs/reel sn7002n maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.2 0.16 a pulsed drain current t a =25c i d puls 0.8 reverse diode d v /d t i s =0.2a, v ds =48v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd class (jesd22-a114-hbm) 0 (<250v) power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 pg-sot-23 h6433: 10000 pcs/reel ssn yes ? qualified according to aec q101 ? halogen-free according to iec61249-2-21
2011-07-11 rev. 2.6 page 2 sn7002n thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimal footprint r thja - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 60 - - v gate threshold voltage, v gs = v ds i d =26a v gs(th) 0.8 1.4 1.8 zero gate voltage drain current v ds =60v, v gs =0, t j =25c v ds =60v, v gs =0, t j =150c i dss - - - - 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - - 10 na drain-source on-state resistance v gs =4.5v, i d =0.17a r ds(on) - 3.9 7.5 w drain-source on-state resistance v gs =10v, i d =0.5a r ds(on) - 2.5 5
2011-07-11 rev. 2.6 page 3 sn7002n electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =0.16a 0.09 0.17 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 34 45 pf output capacitance c oss - 7.2 9.6 reverse transfer capacitance c rss - 2.8 4.2 turn-on delay time t d(on) v dd =30v, v gs =10v, i d =0.5a, r g =6 w - 2.4 3.6 ns rise time t r - 3.2 4.8 turn-off delay time t d(off) - 5.3 8 fall time t f - 3.6 5.4 gate charge characteristics gate to source charge q gs v dd =48v, i d =0.5a - 0.14 0.21 nc gate to drain charge q gd - 0.42 0.63 gate charge total q g v dd =48v, i d =0.5a, v gs =0 to 10v - 1 1.5 gate plateau voltage v (plateau) v dd =48v, i d = 0.5 a - 4.5 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.2 a inv. diode direct current, pulsed i sm - - 0.8 inverse diode forward voltage v sd v gs =0, i f = i s - 0.83 1.2 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 14.2 21.3 ns reverse recovery charge q rr - 5.9 8.8 nc
2011-07-11 rev. 2.6 page 4 sn7002n 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 w 0.38 sn7002n p tot 2 drain current i d = f ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 a 0.22 sn7002n i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 0 10 1 10 2 v v ds -3 10 -2 10 -1 10 0 10 1 10 a sn7002n i d r ds(on) = v ds / i d dc 10 ms 1 ms t p = 200.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 k/w sn7002n z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2011-07-11 rev. 2.6 page 5 sn7002n 5 typ. output characteristic i d = f ( v ds ) parameter: t j = 25 c, v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 0.125 0.25 0.375 0.5 0.625 0.75 a 1 i d 10v 7v 6v 5v 4.5v 4.0v 3.7v 3.5v 3.0v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j = 25 c, v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 a 1 i d 0 0.75 1.5 2.25 3 3.75 4.5 5.25 6 w 7.5 r ds(on) 3.1v 3.5v 3.7v 4.1v 4.5v 5v 6v 7v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t j = 25 c 0 0.8 1.6 2.4 3.2 4 4.8 v 6 v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 a 1 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.2 0.4 0.6 0.8 a 1.1 i d 0 0.05 0.1 0.15 0.2 0.25 0.3 s 0.4 gfs
2011-07-11 rev. 2.6 page 6 sn7002n 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.5 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 1 2 3 4 5 6 7 8 9 10 11 12 w 15 sn7002n r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d =26a -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v 2.2 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 5 10 15 20 v 30 v ds 0 10 1 10 2 10 pf c ciss coss crss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -3 10 -2 10 -1 10 0 10 a sn7002n i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2011-07-11 rev. 2.6 page 7 sn7002n 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.2 a pulsed, t j = 25 c 0 0.4 0.8 1.2 1.6 2 nc 2.8 q g 0 2 4 6 8 10 12 v 16 sn7002n v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 54 56 58 60 62 64 66 68 v 72 sn7002n v (br)dss
sot23 package outline: footprint: packaging: dimensions in mm rev 2. 6 page 8 2011-07-11 sn7002n
published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev 2. 6 page 9 2011-07-11 sn7002n
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